Tag Archives: partial relaxation

Enhancing the Magnetism: Berkeley Researchers Find Enhanced and Controllable Magnetization in Unique Bismuth Ferrite Films

“The nation that controls magnetism will control the universe,” famed fictional detective Dick Tracy predicted back in 1935. Probably an overstatement, but there’s little doubt the nation that leads the development of advanced magnetoelectronic or “spintronic” devices is going to have a serious leg-up on its Information Age competition. A smaller, faster and cheaper way to store and transfer information is the spintronic grand prize and a key to winning this prize is understanding and controlling a  multiferroic property known as “spontaneous magnetization.”

Now, researchers with the U.S. Department of Energy (DOE) Lawrence Berkeley National Laboratory (Berkeley Lab) have been able to enhance spontaneous magnetization in special versions of the popular multiferroic material bismuth ferrite. What’s more, they can turn this magnetization “on/off” through the application of an external electric field, a critical ability for the advancement of spintronic technology. (more…)

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