Tag Archives: spintronic devices

Solving a Spintronic Mystery:

*Berkeley Lab Researchers Resolve Controversy Over Gallium Manganese Arsenide that Could Boost Spintronic Performance*

A long-standing controversy regarding the semiconductor gallium manganese arsenide, one of the most promising materials for spintronic technology, looks to have been resolved. Researchers with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) in collaboration with scientist from University of Notre Dame have determined the origin of the charge-carriers responsible for the ferromagnetic properties that make gallium manganese arsenide such a hot commodity for spintronic devices. Such devices utilize electron spin rather than charge to read and write data, resulting in smaller, faster and much cheaper data storage and processing. (more…)

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Delving Into Manganite Conductivity

Washington, D.C.— Chemical compounds called manganites have been studied for many years since the discovery of colossal magnetoresistance, a property that promises important applications in the fields of magnetic sensors, magnetic random access memories and spintronic devices. However, understanding—and ultimately controlling—this effect remains a challenge, because much about manganite physics is still not known. A research team lead by Maria Baldini from Stanford University and Carnegie Geophysical Laboratory scientists Viktor Struzhkin and Alexander Goncharov has made an important breakthrough in our understanding of the mysterious ways manganites respond when subjected to intense pressure. (more…)

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