magnetic memory – Shamskm: A site to exchange knowledge and solutions

Whirlpools on the Nanoscale Could Multiply Magnetic Memory

By Guest PostJune 22, 2013Scienceadvanced light source, als, als beamline, berkeley lab, billionths, brno university, czech republic, dynamics, electron spin, magnetic contrast, magnetic memory, magnetic states, magnetic vortices, meter, nanoscale, peter fischer, polarity, san diego, spin orientation, Technology, university of california, vojtech uhlir, whirlpools, xray optics

At the Advanced Light Source, Berkeley Lab scientists join an international team to control spin orientation in magnetic nanodisks

“We spent 15 percent of home energy on gadgets in 2009, and we’re buying more gadgets all the time,” says Peter Fischer of the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab). Fischer lets you know right away that while it’s scientific curiosity that inspires his research at the Lab’s Advanced Light Source (ALS), he intends it to help solve pressing problems.

“What we’re working on now could make these gadgets perform hundreds of times better and also be a hundred times more energy efficient,” says Fischer, a staff scientist in the Materials Sciences Division. As a principal investigator at the Center for X-Ray Optics, he leads ALS beamline 6.1.2, where he specializes in studies of magnetism. (more…)

UCLA Engineers Develop New Energy-Efficient Computer Memory Using Magnetic Materials

By Guest PostDecember 21, 2012Scienceaccess memory, computer memory, computers, data, electric voltage, electrical potential, electrons, flowing electric current, Germany, juan g alzate, kang l wang, magnetic bits, magnetic fields, magnetic memory, magnetic property, magnetoelectric, magnetoresistive, memory arrays, meram, meram bit, microprocessors, mram, nanoscale, non volatile logic, pedram khalili, per bit, random, random access memory, singulus technologies, smart phones, spin, spin transfer torque, stt, stt ram, tablets, ucla, ucla darpa, ultra fast

MeRAM is up to 1,000 times more energy-efficient than current technologies

By using electric voltage instead of a flowing electric current, researchers from UCLA’s Henry Samueli School of Engineering and Applied Science have made major improvements to an ultra-fast, high-capacity class of computer memory known as magnetoresistive random access memory, or MRAM.

The UCLA team’s improved memory, which they call MeRAM for magnetoelectric random access memory, has great potential to be used in future memory chips for almost all electronic applications, including smart-phones, tablets, computers and microprocessors, as well as for data storage, like the solid-state disks used in computers and large data centers. (more…)

IBM Research Determines Atomic Limits of Magnetic Memory

By Guest PostJanuary 12, 2012Technologyantiferromagnetism, atomic limits, magnetic atoms, magnetic bit, magnetic memory, magnetic storage

*IBM scientists create the world’s smallest magnetic memory bit using only 12 atoms.*

*First-ever demonstration of engineered atomic-scale structures storing information magnetically at low temperatures.* (more…)

Tag Archives: magnetic memory

Whirlpools on the Nanoscale Could Multiply Magnetic Memory

UCLA Engineers Develop New Energy-Efficient Computer Memory Using Magnetic Materials

IBM Research Determines Atomic Limits of Magnetic Memory