Tag Archives: optoelectronic devices

Edgy Look at 2D Molybdenum Disulfide

Berkeley Lab Researchers Observe 1D Edge States Critical to Nanoelectronic and Photonic Applications

The drive to develop ultrasmall and ultrafast electronic devices using a single atomic layer of semiconductors, such as transition metal dichalcogenides, has received a significant boost. Researchers with the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) have recorded the first observations of a strong nonlinear optical resonance along the edges of a single layer of molybdenum disulfide. The existence of these edge states is key to the use of molybdenum disulfide in nanoelectronics, as well as a catalyst for the hydrogen evolution reaction in fuel cells, desulfurization and other chemical reactions. (more…)

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Infrared technology

UD-led breakthrough may advance development of mid-infrared light sources, lasers

A research group at the University of Delaware has achieved a breakthrough in the emerging field of “Group IV Semiconductor Optoelectronic Devices.”

The UD research team, led by James Kolodzey, demonstrated that it is possible to use a combination of germanium and tin (GeSn) to create a light emitting diode (LED) that operates in the infrared spectrum, wavelengths invisible to the naked eye. (more…)

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