Tag Archives: nanoelectronics

Edgy Look at 2D Molybdenum Disulfide

Berkeley Lab Researchers Observe 1D Edge States Critical to Nanoelectronic and Photonic Applications

The drive to develop ultrasmall and ultrafast electronic devices using a single atomic layer of semiconductors, such as transition metal dichalcogenides, has received a significant boost. Researchers with the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) have recorded the first observations of a strong nonlinear optical resonance along the edges of a single layer of molybdenum disulfide. The existence of these edge states is key to the use of molybdenum disulfide in nanoelectronics, as well as a catalyst for the hydrogen evolution reaction in fuel cells, desulfurization and other chemical reactions. (more…)

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