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Redesigned Material Could Lead to Lighter, Faster Electronics

Thin Layer of Germanium May Replace Silicon in Semiconductors

COLUMBUS, Ohio—The same material that formed the first primitive transistors more than 60 years ago can be modified in a new way to advance future electronics, according to a new study.

Chemists at The Ohio State University have developed the technology for making a one-atom-thick sheet of germanium, and found that it conducts electrons more than ten times faster than silicon and five times faster than conventional germanium. (more…)

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